Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, RoHS Compliant

• NPN Silicon Planar Switching Transistor
• Fast switching devices exhibiting short turn-off and low saturation voltage characteristics
•  Switching and Linear application DC and VHF Amplifier applications

Specifications:

• Transistor Polarity: NPN
• DC Collector Current: 800mA
• Transistor Case Style: TO-18
  
• DC Current Gain hFE: 35hFE
• Collector Emitter Voltage V(br)ceo: 40V
  
• Power Dissipation Pd: 1.2W
• Transistor Mounting: Through Hole
• No. of Pins: 3Pins
  
• Operating Temperature Max: 200°C

112N2220A Datasheet